Military infrared silicon photodiodes
PiN photodiodes manufactured using high resistivity silicon for full depletion and high sensitivity in the 800nm to 1100nm region. Silicon thickness tailored to optimise speed or sensitivity in a given application.
Quadrants for laser designation
Single elements for countermeasures
Custom geometry for fuse / proximity detection
Qualification and environmental testing
Continuity of supply
Military infrared silicon photodiodes
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Contactez-nousDescription
Geometries include:
- single element
- quadrant with standard and narrow transition widths (200µm / 70µm)
